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| Ordering number : ENA0271 2SC6071 SANYO Semiconductors DATA SHEET 2SC6071 Applications * NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Relay drivers, lamp drivers, motor drivers. Features * * * * Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Tc=25C PW100s Conditions Ratings 120 120 50 8 10 13 2 0.95 20 150 --55 to +150 Unit V V V V A A A W W C C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitterr Saturation Voltage Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) VCB=40V, IE=0A VEB=4V, IC=0A VCE=2V, IC=1A VCE=5V, IC=1A VCB=10V, f=1MHz IC=5A, IB=250mA IC=5A, IB=250mA 200 200 60 180 0.93 360 1.4 Conditions Ratings min typ max 10 10 700 MHz pF mV V Unit A A Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 80906 / 22406EA MS IM TB-00002046 No. A0271-1/4 2SC6071 Continued from preceding page. Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Symbol V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf Conditions IC=100A, IE=0A IC=100A, RBE=0 IC=1mA, RBE= IE=100A, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min 120 120 50 8 40 1000 80 typ max Unit V V V V ns ns ns Package Dimensions unit : mm 7518-003 6.5 5.0 2.3 1.5 Package Dimensions unit : mm 7003-003 6.5 5.0 2.3 1.5 0.5 0.5 4 4 7.0 5.5 5.5 7.0 0.8 1.6 7.5 1 0.5 0.6 2 0.8 1.2 3 0 to 0.2 1.2 0.6 2.5 0.85 0.7 0.85 0.5 1.2 1 2 3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 2.3 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA 2.3 2.3 Switching Time Test Circuit PW=20s D.C.1% INPUT IB1 OUTPUT IB2 VR 50 RB + 470F VCC=20V RL + 100F VBE= --5V IC=20IB1= --20IB2=3A No. A0271-2/4 2SC6071 10 9 IC -- VBE VCE=2V 1000 7 5 hFE -- IC VCE=2V Collector Current, IC -- A 8 7 6 5 4 Ta=75C 25C --25C DC Current Gain, hFE 3 2 5C 25C Ta= 7 3 2 1 0 0 0.2 0.4 --25C 100 7 5 0.01 0.6 0.8 1.0 1.2 IT10655 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Base-to-Emitter Voltage, VBE -- V 3 f T -- IC Collector Current, IC -- A 3 5 7 10 IT10656 Cob -- VCB VCE=5V Gain-Bandwidth Product, f T -- MHz 2 f=1MHz 100 7 5 Output Capacitance, Cob -- pF 2 100 7 5 3 2 3 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 1.0 7 5 5 7 10 IT10657 2 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 VCE(sat) -- IC Collector-to-Base Voltage, VCB -- V 7 IT10658 VCE(sat) -- IC IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 3 2 IC / IB=50 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 0.1 7 5 3 2 0.01 7 5 3 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT10659 25 = Ta C 75 C 0.1 7 5 3 2 C 25 5C --2 = Ta 75 C --2 C 5 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 3 VBE(sat) -- IC Collector Current, IC -- A 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 5 7 10 IT10660 ASO IC / IB=50 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 ICP=13A (PW100s) IC=10A 100ms 10 0 10s Collector Current, IC -- A s s 500 s 1m DC 1.0 Ta= --25C 7 5 25C era op ms 10 n tio 75C 3 Tc=25C 2 3 5 7 10 2 3 5 7 100 IT10662 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 5 7 10 IT10661 0.01 Single pulse 23 5 7 1.0 0.1 Collector-to-Emitter Voltage, VCE -- V No. A0271-3/4 2SC6071 1.0 0.95 0.9 PC -- Ta 25 PC -- Tc Collector Dissipation, PC -- W Collector Dissipation, PC -- W 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 140 160 20 15 Ambient Temperature, Ta -- C Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2006. Specifications and information herein are subject to change without notice. PS No. A0271-4/4 o N a he k in ts IT10663 10 5 0 0 20 40 60 80 100 120 140 160 Case Temperature, Tc -- C IT10664 |
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